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| NPN Silicon Darlington Transistors BCV 27 BCV47 For general AF applications q High collector current q High current gain q Complementary types: BCV 26, BCV 46 (PNP) q Type BCV 27 BCV 47 Marking FFs FGs Ordering Code (tape and reel) Q62702-C1474 Q62702-C1501 Pin Configuration 1 2 3 B E C Package1) SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TS = 74 C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS Symbol BCV 27 VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg 30 40 10 Values BCV 47 60 80 10 500 800 100 200 360 150 - 65 ... + 150 Unit V mA mW C 280 210 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 BCV 27 BCV 47 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BCV 27 BCV 47 Collector-base breakdown voltage IC = 100 A BCV 27 BCV 47 Emitter-base breakdown voltage, IE = 10 A Collector cutoff current VCB = 30 V VCB = 60 V VCB = 30 V, TA = 150 C VCB = 60 V, TA = 150 C Emitter cutoff current, VEB = 4 V DC current gain1) IC = 100 A, VCE = 1 V IC = 10 mA, VCE = 5 V IC = 100 mA, VCE = 5 V IC = 0.5 A, VCE = 5 V BCV 27 BCV 47 BCV 27 BCV 47 BCV 27 BCV 47 BCV 27 BCV 47 VCEsat VBEsat BCV 27 BCV 47 BCV 27 BCV 47 IEB0 hFE 4000 2000 10000 4000 20000 10000 4000 2000 - - - - - - - - - - - - - - - - - - - - 1 1.5 V V(BR)CE0 30 60 V(BR)CB0 40 80 V(BR)EB0 ICB0 - - - - - - - - - - 100 100 10 10 100 nA nA A A Values typ. max. Unit V - - - - - - - - - - 10 nA - Collector-emitter saturation voltage1) IC = 100 mA, IB = 0.1 mA Base-emitter saturation voltage1) IC = 100 mA, IB = 0.1 mA AC characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 20 MHz Output capacitance VCB = 10 V, f = 1 MHz 1) fT Cobo - - 170 3.5 - - MHz pF Pulse test: t 300 s, D = 2 %. Semiconductor Group 2 BCV 27 BCV 47 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Collector-base capacitance CCB0 = f (VCB0) Emitter-base capacitance CEB0 = f (VEB0) Permissible pulse load Ptot max/Ptot DC = f (tp) Transition frequency fT = f (IC) VCE = 5 V Semiconductor Group 3 BCV 27 BCV 47 Base-emitter saturation voltage IC = f (VBEsat) hFE = 1000 Collector-emitter saturation voltage IC = f (VCEsat) hFE = 1000 Collector cutoff current ICB0 = f (TA) VCB = VCE max DC current gain hFE = f (IC) VCE = 5 V Semiconductor Group 4 |
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